Breaking New Ground | Electronics Advocate

Breaking New Ground

AMD reveals details on next-gen x86 cores

Wednesday, August 25, 2010
By Gina Roos
AMD reveals details on next-gen x86 cores

AMD has revealed new details on its two next-generation x86 processor core implementations, including the company's unique approach to high-performance, multi-threaded computing, and a sub-one-watt capable low-power design at this week's Hot Chips 22 symposium. »

Qualtre gets funding to commercialize next-gen MEMS gyros

Monday, April 26, 2010
By Gina Roos
Qualtre gets funding to commercialize next-gen MEMS gyros

Qualtre completed an $8 million Series B round of financing, bringing the total funds raised to $13 million, to finance the commercialization of its proprietary bulk acoustic wave (BAW) microelectromechanical system (MEMS) gyroscopes. »

DA5 consortium to develop high-lead solder alternatives

Wednesday, April 21, 2010
By Gina Roos

Bosch, Freescale Semiconductor, Infineon Technologies, NXP Semiconductors and STMicroelectronics have formed a consortium to develop alternatives for high-lead solder for attaching die to semiconductor packages during manufacturing. The new DA5 consortium is soliciting input from die attach material suppliers to jointly evaluate and develop possible alternatives. »

HP Labs ‘memristor’ can dramatically change computer system design

Friday, April 9, 2010
By Gina Roos
HP Labs ‘memristor’ can dramatically change computer system design

Researchers at HB Labs have discovered that the "memristor," first demonstrated by the group in 2008, has more capabilities than was previously thought. Researchers now say that the memristor can perform logic, enabling computation in the future to be performed in chips where data is stored, rather than on a specialized central processing unit.... »

Dow Corning, imec partner on silicon solar cells

Wednesday, April 7, 2010
By Gina Roos
Dow Corning, imec partner on silicon solar cells

imec and Dow Corning are partnering on a joint research project for next-generation crystalline silicon solar cells. Dow Corning has signed a three-year contract that will allow the company to work on several programs under imec's industrial affiliation program (IIAP) on silicon solar cells. »

TSMC to build fab for LED lighting

Monday, April 5, 2010
By Gina Roos
TSMC to build fab for LED lighting

Marking the company's major move into the "green" energy market, TSMC broke ground on its new LED lighting research and development center and fab in Hsinchu Science Park. The company expects to offer LED light sources and light engines for the LED lighting industry in 2011. »

EU partnership launches research project on cooling semiconductors

Saturday, April 3, 2010
By Gina Roos
EU partnership launches research project on cooling semiconductors

A European partnership, consisting of semiconductor manufacturers, electronic design automation (EDA) suppliers, research institutions and universities, has launched a three-year project, looking at the impact of thermal effects on electronic circuits and systems. »

Novellus, IBM form 3-D TSV partnership

Wednesday, March 17, 2010
By Gina Roos
Novellus, IBM form 3-D TSV partnership

Aimed at advanced product applications that call for small form factors and low-power consumption, Novellus Systems and IBM Corp. are working on a joint development program to design a copper-based 3-D semiconductor through-silicon via (TSV) process leveraging Novellus' SABRE copper electroplating and VECTOR PECVD systems. »

ALLVIA embeds capacitors on silicon interposers

Thursday, February 25, 2010
By Gina Roos
ALLVIA embeds capacitors on silicon interposers

ALLVIA, a through-silicon via (TSV) foundry, has integrated embedded capacitors onto silicon interposers, a key interface between a silicon device and an organic or ceramic substrate needed for managing high-interconnect densities. »

IBM researchers demo fastest graphene transistor

Monday, February 8, 2010
By Gina Roos
IBM researchers demo fastest graphene transistor

IBM researchers reported in a published paper in Science magazine that they have demonstrated a radio-frequency (RF) graphene transistor with the highest cut-off frequency achieved for any graphene device -- 100 billion cycles/second (100 gigahertz). »

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